[{"data":1,"prerenderedAt":353},["ShallowReactive",2],{"$f77TKB95H1byzj1ARacwPyZxZnsX8a8b8L8YzVYvA_S8":3,"$fDiwR3u-0wEQVuc_-YY7TLM24h7b7j_jhtuRrftg0Fng":49,"$fvBCk4GcXVpbEkci8IBsYSph7J64MZ6kLl2BvamoQgFg":64,"$fIuLrEhCuLGHK3A8wDAluG1OF8UqmlREfVPpUnaeFZrE":246,"requiredCourseNames_21026153":341,"opengraphListBase/6fVwBe8OXHQalx8I5gLxiWhdC7ltOYeMECHIXQjgWLY":342,"opengraphListBase/_nEcRPHgN-J6FE38E20DJU4SAeupaKaEnf2Mvmp5XaU":343,"opengraphListBase/ZSPxjx8s0FPiJDmaN8VmAOElI29pLBOYIg8iTQiw_nY":344,"opengraphListBase/vPw5JbFyDPNIRH9t5YahTdd2uCx6rPRhuDQoOfqMCG0":345,"opengraphListBase/Q0hqEnws5XWai7IOgHKASqsBJMZAqWWIwx7WJASnRiM":346,"opengraphListBase/6p3GD6w_DH66rQBrKfguG5M5lKAbQmpns2n_zheO6Yw":347,"opengraphListBase/3NCbrDiDq8U2Tvp4_fWg_dGeckec2kfBa57TewL3vbU":348,"opengraphListBase/2pDzFdFSGaRGu77uj3dd50k9vKadcWHXx8lNKQlAcCs":349,"opengraphListBase/wZ60vGvcK4IAQzOArjKrrEYe0fLBeBlMgc-niPt6hm8":350,"opengraphListBase/TjzIVh0jn5zSFNmqUov4-ThG9L05Fcmc5Sm8ug1_PTw":351,"opengraphListBase/D75G59TDRSChanUJwUETWcjvnRRjLgUXaKq9Qv_XvTo":352},{"timeTableCode":4,"year":5,"title":6,"englishTitle":7,"url":8,"semester":9,"method":10,"credits":11,"lecturers":12,"office":13,"email":14,"website":15,"lastUpdate":16,"theme":17,"prerequisites":18,"recommends":19,"materials":20,"outline":21,"practicalContent":10,"selfStudy":22,"evaluation":23,"officeHours":24,"message":25,"others":26,"mainCategory":27,"numberingCodes":32,"grades":36,"periods":37,"keywords":39,"mainDepartment":10,"creditCategories":44,"requiredCourses":45,"requiredCategories":46,"requiredJudgements":47,"departmentIds":48},"21026153",2026,"先端集積デバイス基礎(大学院連携科目)","Fundamentals of Modern Semiconductor Devices","https://kyoumu.office.uec.ac.jp/syllabus/2026/31/31_21026153.html","前学期","",2,"塚本 貴広","西1-205室","t.tsukamoto@uec.ac.jp","Google Classroom : y734sf6q","2026-04-02T07:50:21.000Z","今日の半導体デバイスの進展は著しく、一見その動作原理を理解するのは極めて困難なように思われがちである。しかしながら先端半導体デバイスの進展・集積化は、微細化に加え3次元化が原動力で、デバイスの基本原理自体は変わっていない。この講義では、半導体デバイスの基本原理を復習したうえでその微細化、3次元化への拡張を図り、先端デバイスの設計指針を理解する。加えて、微細化、3次元化を実現する先端半導体プロセスを解説する。\n\nToday's semiconductor devices have made remarkable progress, and at first glance it may seem extremely difficult to understand their operating principles. However, the progress and integration of advanced semiconductor devices is driven by miniaturization and three-dimensionalization, and the basic principles of the devices themselves have not changed. In this lecture, we will review the basic principles of semiconductor devices, extend this to miniaturization and three-dimensionalization, and understand the design guidelines for advanced devices. In addition, we will explain the advanced semiconductor processes that realize miniaturization and three-dimensionalization.","固体電子論等の半導体デバイス基礎科目\n\nSemiconductor Physics and devices, e.g. Fundamental Electronics","半導体工学, 電子デバイス, 固体物理、量子物性関係の科目. \n\nSemiconductor Engineering, Electronic Devices, Solid State Physics, and Quantum Physics","特になし \nWEBに講義メモを掲載。\nSee Web site for the lecture \n\n参考図書: \nReference Books \nタウア・ニン 最新VLSIの基礎(丸善出版)\nTau&Ning Fundamentals of Modern VLSI Devices\nS.M.ジー 半導体デバイス(産業図書)\nS.M. Sze Semiconductor Devices-Physics and Technology  ","英語タイプ(Bb)により講義を実施\n Type(Bb):Basically, lectures are given in Japanese, but partially uses English. Use Japanese teaching materials and English teaching materials together.\n\n内容)\nContents\n1. 概要説明:先端半導体集積デバイス技術の概要\n   Overview: Current status and issues of advanced semiconductor integrated devices\n2. 半導体デバイスの基本原理\n   Basic principles of semiconductor devices\n3. MOS-FETの動作\n   Operation principles of MOS-FET\n4. MOSFETの縮小化\n   Downsizing of MOSFETs\n5. 先端集積MOSデバイス \n   Advanced integrated MOS devices\n6. 量子効果デバイス基礎\n   Fundamentals of quantum effect devices\n7. MOSデバイスでの量子効果\n   Quantum effects in MOS devices\n8.(演習・課題)先端集積デバイスの原理\n  (Exercises and assignments) Advanced integrated MOS devices\n9. プロセス技術(リソグラフィーとエッチング)\n   Basic process technologies (lithography and etching)\n10. プロセス技術(シリコンの熱酸化)\n   Basic process technologies (thermal oxidation)\n11. プロセス技術(薄膜堆積技術)\n   Basic process technologies (thin film deposition)\n12. プロセス技術(不純物拡散)\n   Basic process technologies (diffusion)\n13. プロセス技術(イオン注入)\n   Basic process technologies (ion implantation)\n14. 集積回路のプロセスインテグレーション\n    IC process integration \n15. 総合諮問と解説\n   General consultation and commentary\n\n進め方)\n受講者の理解度を把握しながら、理解が不十分な内容を重点に講義を行う。\n\nWhile checking the comprehension level of the students, lecture focusing on contents with insufficient understanding.","Classroomに掲載された講義資料に目を通すこと。\n\nPlease check the materials posted to Classroom.","電子デバイスの基本を理解し、また、デバイススケール則や材料設計などの原理を理解することを達成目標とする。その理解を評価するために、随時に課するレポートおよび最終試験を行う。レポート点 約80%, 最終試問 約20%、宿題等で評価し合計で60%以上を合格とする。\n\nWe aim to understand the fundamentals of electronic devices and optical devices and to understand principles such as device scale law and material design. In order to evaluate the understanding, we will report on occasion and final examination. Approximately 80% of report points, approx. 20% of final examination, Homework etc., and the total of more than 60% is passed.","随時。ただし、メールによりアポイントメントを取ること。\n\nAt anytime. But an appointment due to e-mail is needed.","半導体は取っ付きにくいと思っている学生諸君が多いようであるが、本質的な部分が理解できると、以外に簡単に動作が分かるようになる。少し努力して、面白さを発見してほしい。\n\nThere seems to be many students who think that semiconductors are difficult to learn, but as long as you understand the essential part, you will be able to easily understand the behavior. 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